MT3S113TU Datasheet - Toshiba Semiconductor

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MT3S113TU Silicon-Germanium NPN Epitaxial Planar Type Transistor

MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications FEAT.

MT3S113TU-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

MT3S113TU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

216.65 KB

Description:

Silicon-Germanium NPN Epitaxial Planar Type Transistor

Features

* Low Noise Figure:NF = 1.15dB (typ. ) (@ f=1GHz)
* High Gain:|S21e|2 = 12.5dB (typ. ) (@ f=1GHz) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 2 3 2.0±0.1 0.65±0.05 0.166±0.05 0.7±0.05 Marking 3 R7 1.1. Base 2.2. Emitter 3.3. Collector 1 2 Absolute Maximum Ratings (Ta = 25°C)

MT3S113TU Distributors

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MT3S113TU Silicon-Germanium NPN Epitaxial Planar Type Transistor Toshiba Semiconductor

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