* Low Noise Figure:NF = 1.15dB (typ.) (@ f=1GHz)
* High Gain:|S21e|2 = 12.5dB (typ.) (@ f=1GHz) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 2 3 2.0±0.1 0.65±0.05 0.166±0.05 0.7±0.05 Marking 3 R7 1.1. Base 2.2. Emitter 3.3. Collector 1 2 Absolute Maximum Ratings (Ta = 25°C)
MT3S113TU Datasheet (216.65 KB)
MT3S113TU
Toshiba ↗ Semiconductor
216.65 KB
Silicon-germanium npn epitaxial planar type transistor.
MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications FEAT.
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