MT3S111TU Silicon-Germanium NPN Epitaxial Planar Type Transistor

Toshiba Semiconductor

Description

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application .

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Datasheet Specifications

Part number: MT3S111TU
Manufacturer: Toshiba ↗ Semiconductor
File Size: 355.03 KB
Datasheet: MT3S111TU-ToshibaSemiconductor.pdf
Description: Silicon-Germanium NPN Epitaxial Planar Type Transistor

Features

* Low-Noise Figure: NF=0.85 dB (typ. ) (@ f=1 GHz)
* High Gain: |S21e|2=12.5 dB (typ. ) (@ f=1 GHz) 2.0±0.1 0.65±0.05 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 2 3 0.166±0.05 0.7±0.05 Marking 3 R5 1 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Un

MT3S111TU Distributors

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MT3S111TU Silicon-Germanium NPN Epitaxial Planar Type Transistor Toshiba Semiconductor

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