Part number:
MT3S111TU
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
355.03 KB
Description:
Silicon-germanium npn epitaxial planar type transistor.
MT3S111TU-ToshibaSemiconductor.pdf
Datasheet Details
MT3S111TU Features
* Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz)
* High Gain: |S21e|2=12.5 dB (typ.) (@ f=1 GHz) 2.0±0.1 0.65±0.05 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 2 3 0.166±0.05 0.7±0.05 Marking 3 R5 1 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Un
MT3S111TU-ToshibaSemiconductor.pdf
Datasheet Details
MT3S111TU
Toshiba ↗ Semiconductor
355.03 KB
Silicon-germanium npn epitaxial planar type transistor.
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