Part number:
MT3S111
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
290.31 KB
Description:
Silicon-germanium npn epitaxial planar type transistor.
* Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz)
* High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) MT3S111 Unit: mm Marking R5 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current
MT3S111
Toshiba ↗ Semiconductor
290.31 KB
Silicon-germanium npn epitaxial planar type transistor.
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