MT3S111 Datasheet - Toshiba Semiconductor

MT3S111, Silicon-Germanium NPN Epitaxial Planar Type Transistor

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications .

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Datasheet Details

Part number:

MT3S111

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

290.31 KB

Description:

Silicon-Germanium NPN Epitaxial Planar Type Transistor

Features

* Low-Noise Figure: NF=0.9 dB (typ. ) (@ f=1 GHz)
* High Gain:|S21e|2=12 dB (typ. ) (@ f=1 GHz) MT3S111 Unit: mm Marking R5 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current

MT3S111 Distributors

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📌 All Tags

MT3S111 Silicon-Germanium NPN Epitaxial Planar Type Transistor Toshiba Semiconductor

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