MT3S111 Silicon-Germanium NPN Epitaxial Planar Type Transistor

Toshiba Semiconductor

Description

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications .

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Datasheet Specifications

Part number: MT3S111
Manufacturer: Toshiba ↗ Semiconductor
File Size: 290.31 KB
Datasheet: MT3S111-ToshibaSemiconductor.pdf
Description: Silicon-Germanium NPN Epitaxial Planar Type Transistor

Features

* Low-Noise Figure: NF=0.9 dB (typ. ) (@ f=1 GHz)
* High Gain:|S21e|2=12 dB (typ. ) (@ f=1 GHz) MT3S111 Unit: mm Marking R5 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current

MT3S111 Distributors

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MT3S111 Silicon-Germanium NPN Epitaxial Planar Type Transistor Toshiba Semiconductor

Toshiba Semiconductor MT3S111-like datasheet