MT3S106FS Datasheet - Toshiba Semiconductor

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MT3S106FS Silicon-Germanium NPN Epitaxial Planar Type Transistor

MT3S106FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S106FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application FEAT.

MT3S106FS-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

MT3S106FS

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

138.84 KB

Description:

Silicon-Germanium NPN Epitaxial Planar Type Transistor

Features

* Low Noise Figure :NF=1.2dB (@f=2GHz)
* High Gain:|S21e|2=10dB (@f=2GHz) Marking 3 41 2 1 +0.02 -0.04 0.6 ±0.05 0.35±0.05 0.15±0.05 Unit:mm 1.0±0.05 0.8±0.05 1 3 0.1±0.05 2 0.1±0.05 0.2±0.05 0.48 0.1±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-Base

Applications

* (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc. ). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which ma

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MT3S106FS Silicon-Germanium NPN Epitaxial Planar Type Transistor Toshiba Semiconductor

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