* Low Noise Figure :NF=0.9dB (@f=2GHz)
* High Gain:|S21e|2=11.5dB (@f=2GHz) Marking 3 43 2 1 +0.02 -0.04 0.6 ±0.05 0.35±0.05 0.15±0.05 Unit:mm 1.0±0.05 0.8±0.05 1 3 0.1±0.05 2 0.1±0.05 0.2±0.05 0.48 0.1±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-Bas
MT3S108FS Datasheet (84.60 KB)
MT3S108FS
Toshiba ↗ Semiconductor
84.60 KB
Silicon-germanium npn epitaxial planar type transistor.
MT3S108FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S108FS VCO OSCILLETOR STAGE VHF-SHF Low Noise Amplifier Application FEAT.
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