RN1241 Datasheet - Toshiba Semiconductor

RN1241 Silicon NPN Transistor

RN1241~RN1244 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1241,RN1242,RN1243,RN1244 For Muting and Switching Applications l High emitter-base voltage : VEBO = 25v (min) l High reverse hfe : reverse hFE = 150 (typ.) (VCE = 2V, IC = 4ma) l Low on resistance : RON = 1Ω (typ.) (IB = 5mA) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process Unit: mm Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 0.13g ― .

RN1241 Datasheet (86.89 KB)