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SSM6K406TU Datasheet - Toshiba Semiconductor

SSM6K406TU Silicon N-Channel MOSFET

SSM6K406TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K406TU ○ High-Speed Switching Applications 4.5-V drive Low ON-resistance: Ron = 38.5 mΩ (max) (@VGS = 4.5 V) Ron = 25.0 mΩ (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25˚C) Characteristics Symbol Rating Unit Drain source voltage VDSS 30 V Gate source voltage VGSS ±20 V Drain current DC ID Pulse IDP 4.4 A 8.8 Drain power dissipation PD (Note 1) 500 mW Cha.

SSM6K406TU Datasheet (233.83 KB)

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Datasheet Details

Part number:

SSM6K406TU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

233.83 KB

Description:

Silicon n-channel mosfet.

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SSM6K406TU Silicon N-Channel MOSFET Toshiba Semiconductor

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