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SSM6K517NU Silicon N-Channel MOSFET

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Description

MOSFETs Silicon N-Channel MOS (U-MOS-H) SSM6K517NU 1.Applications * Power Management Switches * High-Speed Switching 2..

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Features

* (1) 1.8-V drive (2) Low drain-source on-resistance : RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) 3. Packaging and Pin Assignment UDFN6B SSM6K517NU 1, 2, 5, 6: Drain 3: Gate 4: Source ©2020 Toshiba Electronic Devices & Storage Cor

Applications

* Power Management Switches

SSM6K517NU Distributors

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