Datasheet Specifications
- Part number
- SSM6K202FE
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 367.36 KB
- Datasheet
- SSM6K202FE_ToshibaSemiconductor.pdf
- Description
- Silicon N-Channel MOSFET
Description
MOSFETs Silicon N-Channel MOS SSM6K202FE 1.Applications * High-Speed Switching * Power Management Switches 2..
Features
* (1) 1.8-V drive (2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 101 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 85 mΩ (max) (@VGS = 4.0 V) 3. Packaging and Internal Circuit ES6 SSM6K202FE 1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6; Drain ©2021-2022 1 Toshiba ElectrApplications
* High-Speed SwitchingSSM6K202FE Distributors
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