Part number:
SSM6K202FE
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
367.36 KB
Description:
Silicon n-channel mosfet.
SSM6K202FE_ToshibaSemiconductor.pdf
Datasheet Details
SSM6K202FE Features
* (1) 1.8-V drive (2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 101 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 85 mΩ (max) (@VGS = 4.0 V) 3. Packaging and Internal Circuit ES6 SSM6K202FE 1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6; Drain ©2021-2022 1 Toshiba Electr
SSM6K202FE_ToshibaSemiconductor.pdf
Datasheet Details
SSM6K202FE
Toshiba ↗ Semiconductor
367.36 KB
Silicon n-channel mosfet.
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