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SSM6K202FE Datasheet - Toshiba Semiconductor

SSM6K202FE - Silicon N-Channel MOSFET

SSM6K202FE Features

* (1) 1.8-V drive (2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 101 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 85 mΩ (max) (@VGS = 4.0 V) 3. Packaging and Internal Circuit ES6 SSM6K202FE 1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6; Drain ©2021-2022 1 Toshiba Electr

SSM6K202FE_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM6K202FE

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

367.36 KB

Description:

Silicon n-channel mosfet.

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