SSM6K210FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K210FE ○ High-Speed Switching Applications ○ Power Management Switch Applications Unit: mm 4.0-V drive Low ON-resistance: Ron = 371 mΩ (max) (@VGS = 4.0 V), Ron = 228 mΩ (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25˚C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V Drain current DC ID Pulse IDP 1.4 A 2.8 Drain power dissip
SSM6K210FE-ToshibaSemiconductor.pdf
Datasheet Details
Part number:
SSM6K210FE
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
245.88 KB
Description:
Silicon n-channel mosfet.