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SSM6K210FE Datasheet - Toshiba Semiconductor

SSM6K210FE Silicon N-Channel MOSFET

SSM6K210FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K210FE ○ High-Speed Switching Applications ○ Power Management Switch Applications Unit: mm 4.0-V drive Low ON-resistance: Ron = 371 mΩ (max) (@VGS = 4.0 V), Ron = 228 mΩ (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25˚C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V Drain current DC ID Pulse IDP 1.4 A 2.8 Drain power dissip.

SSM6K210FE-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM6K210FE

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

245.88 KB

Description:

Silicon n-channel mosfet.

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SSM6K210FE SSM6K210FE Silicon N-Channel MOSFET Toshiba Semiconductor

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