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SSM6K210FE Silicon N-Channel MOSFET

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Description

SSM6K210FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K210FE ○ High-Speed Switching Applications ○ Power Management Switch Appli.

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Applications

* ○ Power Management Switch Applications Unit: mm
* 4.0-V drive
* Low ON-resistance: Ron = 371 mΩ (max) (@VGS = 4.0 V), Ron = 228 mΩ (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25˚C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltag

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