SSM6K211FE Silicon N-Channel MOSFET

Toshiba Semiconductor

Description

SSM6K211FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅢ) SSM6K211FE ○ High-Speed Switching Applications ○ Power Management Swi.

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Datasheet Specifications

Part number: SSM6K211FE
Manufacturer: Toshiba ↗ Semiconductor
File Size: 241.78 KB
Datasheet: SSM6K211FE_ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Applications

* ○ Power Management Switch Applications
* 1.5-V drive
* Low ON-resistance: Ron = 118 mΩ (max) (@VGS = 1.5 V) Ron = 82 mΩ (max) (@VGS = 1.8 V) Ron = 59 mΩ (max) (@VGS = 2.5 V) Ron = 47 mΩ (max) (@VGS = 4.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol R

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SSM6K211FE Silicon N-Channel MOSFET Toshiba Semiconductor

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