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SSM6K217FE Datasheet - Toshiba

SSM6K217FE Silicon N-Channel MOSFET

SSM6K217FE Features

* (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 155 mΩ (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) = 165 mΩ (typ.) (@VGS = 4.5 V, ID = 1.0 A) RDS(ON) = 170 mΩ (typ.) (@VGS = 3.6 V, ID = 1.0 A) RDS(ON) = 190 mΩ (typ.) (@VGS = 2.5 V, ID = 0.5 A) RDS(ON) = 230 mΩ (typ.) (@VGS

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Datasheet Details

Part number:

SSM6K217FE

Manufacturer:

Toshiba ↗

File Size:

213.14 KB

Description:

Silicon n-channel mosfet.

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SSM6K217FE SSM6K217FE Silicon N-Channel MOSFET Toshiba

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