SSM6K217FE Datasheet, mosfet equivalent, Toshiba

SSM6K217FE Features

• Mosfet (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 155 mΩ (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) = 165 mΩ (typ.) (@VGS = 4.5 V, ID = 1.0 A) RDS(ON) = 170 mΩ

PDF File Details

Part number:

SSM6K217FE

Manufacturer:

Toshiba (https://www.toshiba.com/)

File Size:

213.14kb

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📄 Datasheet

Description:

Silicon n-channel mosfet.

SSM6K217FE Application

• Applications
• Power Management Switches
• DC-DC Converters 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resist

TAGS

SSM6K217FE

Toshiba

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