SSM6K209FE www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K209FE ○ High-Speed Switching Applications ○ Power Management Switch Applications 4.0V drive Low ON-resistance: Ron = 145mΩ (max) (@VGS = 4.0 V) Ron = 74mΩ (max) (@VGS = 10 V) 1.6±0.05 1.0±0.05 0.5 0.5 1 2 3 1.6±0.05 1.2±0.05 UNIT: mm Absolute Maximum Ratings (Ta = 25˚C) Characteristic Drain source voltage Gate source voltage Drain current Drain power dissipation C
SSM6K209FE_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
SSM6K209FE
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
212.68 KB
Description:
Mosfet.