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SSM6K201FE Datasheet - Toshiba Semiconductor

SSM6K201FE Power Management Switch Applications

www.DataSheet4U.com SSM6K201FE Tentative TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K201FE Power Management Switch Applications High Speed Switching Applications 1.8 V drive Low ON-resistance: Ron = 186 mΩ (max) (@VGS = 1.8V) Ron = 119 mΩ (max) (@VGS = 2.5V) Ron = 91 mΩ (max) (@VGS = 4.0V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain source voltage Gate source voltage Drain current Drain power dissipation Channel te.

SSM6K201FE_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM6K201FE

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

387.92 KB

Description:

Power management switch applications.

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