www.DataSheet4U.com SSM6K201FE Tentative TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K201FE Power Management Switch Applications High Speed Switching Applications 1.8 V drive Low ON-resistance: Ron = 186 mΩ (max) (@VGS = 1.8V) Ron = 119 mΩ (max) (@VGS = 2.5V) Ron = 91 mΩ (max) (@VGS = 4.0V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain source voltage Gate source voltage Drain current Drain power dissipation Channel te
SSM6K201FE_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
SSM6K201FE
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
387.92 KB
Description:
Power management switch applications.