SSM6K208FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K208FE ○ High-Speed Switching Applications ○ Power Management Switch Applications Unit: mm 1.8V drive Low ON-resistance: Ron = 296 mΩ (max) (@VGS = 1.8 V) Ron = 177 mΩ (max) (@VGS = 2.5 V) Ron = 133 mΩ (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel t
SSM6K208FE-ToshibaSemiconductor.pdf
Datasheet Details
Part number:
SSM6K208FE
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
230.57 KB
Description:
Silicon n-channel mosfet.