SSM6K361NU - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) 4.5 V drive (2) Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ. ) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ. ) (@VGS = 10 V) 3. Packaging and Pin Assignment UDFN6B SSM6K361NU 1, 2, 5, 6: Drain 3: Gate 4: Source ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-12 2020-04-17 Rev.7.0 SSM6K361NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V.

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Published: May 20, 2019 |