SSM6K30FE Datasheet (Toshiba Semiconductor)

SSM6K30FE, Silicon N-Channel MOSFET

SSM6K30FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Π-MOS VII) SSM6K30FE ○ High-speed switching ○ DC-DC Converter Unit: mm Small package Low RDS (ON): RDS(ON) = 210 mΩ (max) (@VGS = 10 V) : R DS(ON) = 420 mΩ (max) (@VGS = 4 V) High-speed switching: ton = 19 ns (typ.) : toff = 10 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Symbol VDS VGSS Rating Unit 20 V ±20 V 1,2,5,6: Drain 3