SSM6K31FE Datasheet (Toshiba Semiconductor)

SSM6K31FE, Silicon N-Channel MOSFET

SSM6K31FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K31FE ○ High speed switching ○ DC-DC Converter : mm 4-V drive Low RDS (ON): R DS (ON) = 320 mΩ (max) (@VGS = 10 V) : R DS (ON) = 540 mΩ (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range VDS 20 V VGSS ±20 V ID