Datasheet Specifications
- Part number
- SSM6K06FU
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 219.28 KB
- Datasheet
- SSM6K06FU_ToshibaSemiconductor.pdf
- Description
- High Speed Switching Applications
Description
www.DataSheet4U.com SSM6K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K06FU High Speed Switching Applications * *
Applications
* Small package Low on resistance : Ron = 160 mΩ max (@VGS = 4 V) : Ron = 210 mΩ max (@VGS = 2.5 V) Low gate threshold voltage Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) TchSSM6K06FU Distributors
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