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SSM6K08FU CategoryTOSHIBA Field Effect Transistor

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Description

www.DataSheet4U.com SSM6K08FU CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category SSM6K08FU High Speed Switching A.

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Applications

* Small package Low on resistance: Ron = 105 mΩ (max) (@VGS = 4 V) Ron = 140 mΩ (max) (@VGS = 2.5 V) High-speed switching: ton = 16 ns (typ. ) toff = 15 ns (typ. ) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power d

SSM6K08FU Distributors

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