www.DataSheet4U.com SSM6K08FU CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category SSM6K08FU High Speed Switching Applications Small package Low on resistance: Ron = 105 mΩ (max) (@VGS = 4 V) Ron = 140 mΩ (max) (@VGS = 2.5 V) High-speed switching: ton = 16 ns (typ.) toff = 15 ns (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage
SSM6K08FU_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
SSM6K08FU
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
179.34 KB
Description:
Categorytoshiba field effect transistor.