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SSM6K08FU Datasheet - Toshiba Semiconductor

SSM6K08FU CategoryTOSHIBA Field Effect Transistor

www.DataSheet4U.com SSM6K08FU CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category SSM6K08FU High Speed Switching Applications Small package Low on resistance: Ron = 105 mΩ (max) (@VGS = 4 V) Ron = 140 mΩ (max) (@VGS = 2.5 V) High-speed switching: ton = 16 ns (typ.) toff = 15 ns (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage.

SSM6K08FU_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM6K08FU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

179.34 KB

Description:

Categorytoshiba field effect transistor.

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SSM6K08FU SSM6K08FU CategoryTOSHIBA Field Effect Transistor Toshiba Semiconductor

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