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SSM6K411TU Datasheet - Toshiba Semiconductor

SSM6K411TU MOSFET

SSM6K411TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K411TU ○ Power Management Switch Applications ○ High-Speed Switching Applications 2.5-V drive Low ON-resistance：RDS(ON) = 23.8 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 14.3 mΩ (max) (@VGS = 3.5 V) 0.65 0.65 2.1±0.1 1.7±0.1 Unit: mm RDS(ON) = 12 mΩ (max) (@VGS = 4.5 V) 2.0±0.1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDSS VGSS.

SSM6K411TU Datasheet (196.18 KB)

Preview of SSM6K411TU PDF

Datasheet Details

Part number:

SSM6K411TU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

196.18 KB

Description:

Mosfet.

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