SSM6K411TU Datasheet (Toshiba Semiconductor)

SSM6K411TU Description

SSM6K411TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K411TU ○ Power Management Switch Applications ○ High-Speed Switching Applications * * 2.5-V drive Low ON-resistance：RDS(ON) = 23.8 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 14.3 mΩ (max) (@VGS = 3.5 V) 0.65 0.65 2.1±0.1 1.7±0.1 Unit: mm RDS(ON) = 12 mΩ (max) (@VGS = 4.5 V) 2.0±0.1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDSS VGSS

SSM6K411TU Datasheet - Toshiba Semiconductor

SSM6K411TU, MOSFET