TK110U65Z - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TK110U65Z
Manufacturer	Toshiba ↗ Semiconductor
File Size	489.61 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK110U65Z-ToshibaSemiconductor.pdf

(1) Low drain-source on-resistance: RDS(ON) = 0.086 Ω (typ. ) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA) 3. Packaging and Internal Circuit TK110U65Z TOLL 1: Gate 2: Source 2 3, 4, 5, 6, 7, 8: Source 1 9: Drain (heatsink) Notice: Only use source 2 pin for gate input signal return. Please make sure that the main current flows into the source 1 pins. 4. Absolute Maximum Ratings (Note) (Ta = 25.
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Published: Dec 26, 2023 |