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TK11A55D N-Channel MOSFET

TK11A55D Description

TK11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK11A55D Switching Regulator Applications * * * .

TK11A55D Features

* ce industry, medical equipment, equipment

TK11A55D Applications

* Low drain-source ON-resistance: RDS (ON) = 0.52 Ω (typ. ) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ. ) Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Rating

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N-Channel MOSFET Toshiba Semiconductor
Toshiba Semiconductor TK11A55D-like datasheet