TK11A55D Datasheet - Toshiba Semiconductor

TK11A55D N-Channel MOSFET

TK11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK11A55D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.52 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain cur.

TK11A55D Features

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TK11A55D Datasheet (173.05 KB)