TK11A65W - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TK11A65W
Manufacturer	Toshiba ↗ Semiconductor
File Size	237.62 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK11A65W-ToshibaSemiconductor.pdf

(1) Low drain-source on-resistance: RDS(ON) = 0.33 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.45 mA) 3. Packaging and Internal Circuit TK11A65W 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipa.

📁 TK11A65W Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Published: Sep 20, 2014 |