TK11A45D Datasheet - Toshiba Semiconductor

TK11A45D N-Channel MOSFET

TK11A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK11A45D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.2 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 450 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 Absolute Max.

TK11A45D Features

* quipment, equipment used

TK11A45D Datasheet (248.88 KB)