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TK11A65D

Silicon N-Channel MOSFET

TK11A65D Features

* (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (

TK11A65D Datasheet (328.49 KB)

Preview of TK11A65D PDF

Datasheet Details

Part number:

TK11A65D

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

328.49 KB

Description:

Silicon n-channel mosfet.

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TK11A65D Silicon N-Channel MOSFET Toshiba Semiconductor

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