Part number:
TK11A65D
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
328.49 KB
Description:
Silicon n-channel mosfet.
* (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (
TK11A65D Datasheet (328.49 KB)
TK11A65D
Toshiba ↗ Semiconductor
328.49 KB
Silicon n-channel mosfet.
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