TK11A65D Datasheet, Mosfet, Toshiba Semiconductor

TK11A65D Features

• Mosfet (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) Enha

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Part number:

TK11A65D

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

328.49kb

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📄 Datasheet

Description:

Silicon n-channel mosfet.

TK11A65D Application

• Applications
• Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) High forwar

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TK11A65D

Toshiba Semiconductor

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