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TK11A65D Silicon N-Channel MOSFET

TK11A65D Description

TK11A65D MOSFETs Silicon N-Channel MOS (π-MOS) TK11A65D 1.Applications * Switching Voltage Regulators 2..

TK11A65D Features

* (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ. ) High forward transfer admittance: |Yfs| = 7.5 S (typ. ) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (

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Silicon N-Channel MOSFET Toshiba Semiconductor
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