TK11A50D Datasheet - Toshiba Semiconductor

TK11A50D N-Channel MOSFET

TK11A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK11A50D Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 0.69 ± 0.15 Ф0.2 M A Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 ±30 11 44 45 264 11 4.5 150 55 to 150 A W mJ A mJ °C °C Unit V V 2.5.

TK11A50D Features

* d to control combustions or explosions, safe

TK11A50D Datasheet (229.54 KB)