TK1Q90A Datasheet - Toshiba Semiconductor

TK1Q90A, Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS (π-MOS) TK1Q90A 1.Applications * Switching Voltage Regulators 2..

Features

* (1) Low drain-source on-resistance: RDS(ON) = 6.7 Ω (typ. ) (2) High forward transfer admittance: |Yfs| = 1.0 S (typ. ) (3) Low leakage current: IDSS = 100 µA (max) (VDS = 720 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK1Q90A 1: Gate (G) 2:

TK1Q90A-ToshibaSemiconductor.pdf