TK25A10K3 N-Channel MOSFET

Toshiba Semiconductor

Description

TK25A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK25A10K3 Swiching Regulator Applications * Low drain-source .

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Datasheet Specifications

Part number: TK25A10K3
Manufacturer: Toshiba ↗ Semiconductor
File Size: 135.09 KB
Datasheet: TK25A10K3-ToshibaSemiconductor.pdf
Description: N-Channel MOSFET

Applications

* Low drain-source ON resistance: RDS (ON) = 31 mΩ (typ. )
* High forward transfer admittance: |Yfs| = 50 S (typ. )
* Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
* Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratin

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TK25A10K3 N-Channel MOSFET Toshiba Semiconductor

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