Datasheet Specifications
- Part number
- TK25E06K3
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 240.26 KB
- Datasheet
- TK25E06K3-ToshibaSemiconductor.pdf
- Description
- Silicon N-Channel MOSFET
Description
TK25E06K3 MOSFETs Silicon N-channel MOS (U-MOS) TK25E06K3 1.Applications * Switching Voltage Regulators 2..
Features
* (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 14 mΩ (typ. ) High forward transfer admittance: |Yfs| = 50 S (typ. ) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsinTK25E06K3 Distributors
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