Part number:
TK25E06K3
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
240.26 KB
Description:
Silicon n-channel mosfet.
TK25E06K3 Datasheet (240.26 KB)
Datasheet Details
TK25E06K3 Features
* (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 14 mΩ (typ.) High forward transfer admittance: |Yfs| = 50 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsin
TK25E06K3 Datasheet (240.26 KB)
Datasheet Details
TK25E06K3
Toshiba ↗ Semiconductor
240.26 KB
Silicon n-channel mosfet.
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TK25E06K3 Distributor
