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TK25E06K3 Datasheet - Toshiba Semiconductor

TK25E06K3-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TK25E06K3

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

240.26 KB

Description:

Silicon n-channel mosfet.

TK25E06K3, Silicon N-Channel MOSFET

TK25E06K3 Features

* (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 14 mΩ (typ.) High forward transfer admittance: |Yfs| = 50 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsin

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