TK25E60X - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.2 mA) 3. Packaging and Internal Circuit TK25E60X 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Dra.

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Published: Nov 9, 2019 |