* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 15 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TK25S06N1L DPAK+ 1: Gate 2: Drain (heatsink)
TK25S06N1L Datasheet (273.21 KB)
TK25S06N1L
273.21 KB
N-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK25S06N1L
1. Applications
* Automotive
* Switching Voltage Regulators
* Motor Driver.
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