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TPCL4201 Datasheet - Toshiba Semiconductor

TPCL4201 Silicon N-Channel MOSFET

of the precautions, and comply with the precautions stated. 3 2014-03-05 Rev.3.0 TPCL4201 7. Electrical Characteristics 7.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Gate leakage current Source cut-off current Source-source breakdown voltage Gate threshold vol.

TPCL4201 Features

* (1) (2) (3) (4) (5) Small, thin package Low source-source on-resistance: RSS(ON) = 26 mΩ (typ.) (VGS = 4.5 V) Low leakage current: ISSS = 10 µA (max) (VSS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VSS = 10 V, IS = 200 µA) Common drain 3. Packaging and Internal Circuit 1: Source 1 2: Gate 1 3:

TPCL4201 Datasheet (384.88 KB)

Preview of TPCL4201 PDF

Datasheet Details

Part number:

TPCL4201

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

384.88 KB

Description:

Silicon n-channel mosfet.

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TPCL4201 Silicon N-Channel MOSFET Toshiba Semiconductor

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