* (1) (2) (3) (4) (5) Small, thin package Low source-source on-resistance: RSS(ON) = 26 mΩ (typ.) (VGS = 4.5 V) Low leakage current: ISSS = 10 µA (max) (VSS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VSS = 10 V, IS = 200 µA) Common drain 3. Packaging and Internal Circuit 1: Source 1 2: Gate 1 3:
TPCL4201 Datasheet (384.88 KB)
TPCL4201
Toshiba ↗ Semiconductor
384.88 KB
Silicon n-channel mosfet.
TPCL4201
MOSFETs Silicon N-Channel MOS (U-MOS)
TPCL4201
1. Applications
* Dedicated to Single-Cell Lithium-Ion Secondary Battery Application.
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