TPCL4202 Datasheet - Toshiba Semiconductor

MOSFETs

TPCL4202 Features

* (1) (2) (3) (4) (5) Small, thin package Low source-source on-resistance: RSS(ON) = 28 mΩ (typ.) (VGS = 4.5 V) Low leakage current: ISSS = 10 µA (max) (VSS = 30 V) Enhancement mode: Vth = 0.5 to 1.2 V (VSS = 10 V, IS = 200 µA) Common drain 3. Packaging and Internal Circuit 1: Source 1 2: Gate 1 3:

TPCL4202 General Description

of the precautions, and comply with the precautions stated. 3 2014-02-17 Rev.3.0 TPCL4202 7. Electrical Characteristics 7.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Gate leakage current Source cut-off current Source-source breakdown voltage Gate threshold vol.

TPCL4202 Datasheet (380.06 KB)

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TPCL4202

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Toshiba ↗ Semiconductor

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Mosfets.
TPCL4202 MOSFETs Silicon N-Channel MOS (U-MOS) TPCL4202 1. Applications Dedicated to Single-Cell Lithium-Ion Secondary Battery Application.

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TPCL4202 Features

TPCL4202 General Description

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