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TPCL4203 Datasheet - Toshiba Semiconductor

TPCL4203 MOSFETs

of the precautions, and comply with the precautions stated. 3 2011-02-01 Rev.3.0 TPCL4203 7. Electrical Characteristics 7.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Gate leakage current Source cut-off current Source-source breakdown voltage Gate threshold vol.

TPCL4203 Features

* (1) (2) (3) (4) (5) Small, thin package Low source-source on-resistance: RSS(ON) = 27 mΩ (typ.) (VGS = 4.5 V) Low leakage current: ISSS = 10 µA (max) (VSS = 24 V) Enhancement mode: Vth = 0.5 to 1.2 V (VSS = 10 V, IS = 200 µA) Common drain 3. Packaging and Internal Circuit 1: Source 1 2: Gate 1 3:

TPCL4203 Datasheet (373.10 KB)

Preview of TPCL4203 PDF

Datasheet Details

Part number:

TPCL4203

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

373.10 KB

Description:

Mosfets.

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