TPCP8006 Datasheet - Toshiba Semiconductor

TPCP8006 MOSFET

TPCP8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) www.DataSheet4U.com TPCP8006 Notebook PC Applications Portable Equipment Applications 0.33 ± 0.05 Unit: mm 8 0.05 M Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 6.5 mΩ (typ.) High forward transfer admittance:|Yfs| = 36 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V.

TPCP8006 Features

* ems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human

TPCP8006_ToshibaSemiconductor.pdf