* (1) High DC current gain: hFE = 120 to 240 (VCE = 2 V, IC = 0.3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.15 V (max) (IC = 1.0 A, IB = 0.1 A) (3) High-speed switching: tf = 170 ns (typ.) (IC = 1.0 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Bas
TPCP8514 Datasheet (300.00 KB)
TPCP8514
300.00 KB
Silicon npn transistor.
Bipolar Transistors Silicon NPN Epitaxial Type
TPCP8514
TPCP8514
1. Applications
* High-Speed Switching
* DC-DC Converters
2. Featur.
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