TPCP8510 Datasheet - Toshiba Semiconductor

TPCP8510 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8510 TPCP8510 High-Speed, High-Voltage Switching Applications DC-DC Converter Applications High DC current gain: hFE = 120 to 300 (IC = 0.1 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max) High-speed switching: tf = 0.2 μs (typ) 0.33±0.05 0.05 M A 8 5 Unit: mm 2.4±0.1 2.8±0.1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 0.475 1 4 0.65 2.9±0.1 B 0.05 M B A 0.

TPCP8510_ToshibaSemiconductor.pdf