TPCP8404 Datasheet - Toshiba

TPCP8404 Field Effect Transistor

TPCP8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOⅤ/U-MOSⅣ) TPCP8404 Portable Equipment Applications Motor Drive Applications Low drain-source ON-resistance : P Channel RDS (ON) = 38 mΩ(typ.) (VGS= 10V) N Channel RDS (ON) = 38 mΩ(typ.) （VGS=10V) High forward transfer admittance : P Channel |Yfs| = 7.3 S (typ.) N Channel |Yfs| = 8 S (typ.) Low leakage current : P Channel IDSS = 10 μA (max) (VDS = 30 V) N Channel IDSS = 10 μA (max) (VD.

TPCP8404 Features

* Coss Crss

* 0.4 10

* 0.1

* 1

* 10

* 100 0

* 80

* 40 0 40 80 120 160 Drain

* source voltage VDS (V) Ambient temperature Ta (°C) PD

* Ta 2.0 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation

TPCP8404_Toshiba.pdf