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TPCP8406 Datasheet - Toshiba Semiconductor

TPCP8406 MOSFETs

TPCP8406 Features

* (1) Low drain-source on-resistance P-channel RDS(ON) = 33 mΩ (typ.) (VGS = -10 V), N-channel RDS(ON) = 24 mΩ (typ.) (VGS = 10 V) (2) Low leakage current P-channel IDSS = -10 µA (VDS = -40 V), N-channel IDSS = 10 µA (VDS = 40 V) (3) Enhancement mode P-channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -

TPCP8406-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TPCP8406

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

351.05 KB

Description:

Mosfets.

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TPCP8406 TPCP8406 MOSFETs Toshiba Semiconductor

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