TPCP8403 Datasheet - Toshiba Semiconductor

TPCP8403 Field Effect Transistor

TPCP8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCP8403 Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications Lead(Pb)-Free Low drain-source ON resistance : P Channel RDS (ON) = 55 mΩ (typ.) N Channel RDS (ON) = 31 mΩ (typ.) High forward transfer admittance : P Channel |Yfs| = 6.0 S (typ.) N Channel |Yfs| = 8.6 S (typ.) Low leakage current : P Channel IDSS = .

TPCP8403 Features

* 2 0 (W) (V) VDS -30 PD Drain power dissipation Drain-source voltage (2) 1.0 (3) 0.5 (4) 0 0 40 80 120 160 200 0 Ambient temperature Ta (℃)

TPCP8403-ToshibaSemiconductor.pdf