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TPCP8011 - Silicon N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	TPCP8011
Manufacturer	Toshiba ↗
File Size	260.46 KB
Description	Silicon N-Channel MOSFET
Datasheet	TPCP8011-Toshiba.pdf

TPCP8011 Product details

Features

(1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge : QSW = 4.7 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 25.5 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TPCP8011 PS-8 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2012-12 2016-02-23 Rev.5.0 TPCP8011 4. Absolute Maximum Ratin.

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Published: Jan 27, 2024 |