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TPCP8013

Silicon N-Channel MOSFET

TPCP8013 Features

* (1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge : QSW = 4.5 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 41.5 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) 3. Packaging and

TPCP8013 Datasheet (256.91 KB)

Preview of TPCP8013 PDF

Datasheet Details

Part number:

TPCP8013

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

256.91 KB

Description:

Silicon n-channel mosfet.

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TPCP8013 Silicon N-Channel MOSFET Toshiba Semiconductor

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