TPCP8012 - Silicon N-Channel MOSFET
TPCP8012 Features
* (1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge : QSW = 10 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 16.2 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) 3. Packaging and I
