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TPCP8010

Silicon N-Channel MOSFET

TPCP8010 Features

* (1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge : QSW = 4.9 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 19.1 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) 3. Packaging and

TPCP8010 Datasheet (266.46 KB)

Preview of TPCP8010 PDF

Datasheet Details

Part number:

TPCP8010

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

266.46 KB

Description:

Silicon n-channel mosfet.

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TPCP8010 Silicon N-Channel MOSFET Toshiba Semiconductor

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