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TPCP8512 Datasheet - Toshiba

TPCP8512 Silicon NPN Transistor

TPCP8512 Features

* (1) High DC current gain: hFE = 400 to 1000 (VCE = 2 V, IC = 0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.21 V (max) (IC = 1.6 A, IB = 32 mA) (3) High-speed switching: tf = 120 ns (typ.) (IC = 1.6 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Ba

TPCP8512 Datasheet (342.18 KB)

Preview of TPCP8512 PDF

Datasheet Details

Part number:

TPCP8512

Manufacturer:

Toshiba ↗

File Size:

342.18 KB

Description:

Silicon npn transistor.

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TPCP8512 Silicon NPN Transistor Toshiba

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