* (1) High DC current gain: hFE = 400 to 1000 (VCE = 2 V, IC = 0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.21 V (max) (IC = 1.6 A, IB = 32 mA) (3) High-speed switching: tf = 120 ns (typ.) (IC = 1.6 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Ba
TPCP8512 Datasheet (342.18 KB)
TPCP8512
342.18 KB
Silicon npn transistor.
Bipolar Transistors Silicon NPN Epitaxial Type
TPCP8512
TPCP8512
1. Applications
* High-Speed Switching
* DC-DC Converters
2. Featur.
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