TPCP8505 Datasheet - Toshiba Semiconductor

TPCP8505 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) TPCP8505 TPCP8505 High-Speed Switching Applications DC-DC Converter Applications High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max) High-speed switching: tf = 120 ns (typ.) 0.33±0.05 0.05 M A 8 5 Unit: mm 2.4±0.1 2.8±0.1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 100 V Colle.

TPCP8505_ToshibaSemiconductor.pdf