Datasheet Details
Part number:
TPCP8507
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
349.83 KB
Description:
Silicon NPN Transistor
TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications DC-DC Converters TPCP8507 Unit: mm * High DC current gain : hFE = 120 to 300 (IC = 0.1 A) * Low collector-emitter saturation voltage : VCE(sat) = 0.14 V (max) * High-speed switching : t
TPCP8507_ToshibaSemiconductor.pdf
TPCP8507, Silicon NPN Transistor
TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications DC-DC Converters TPCP8507 Unit: mm High DC current gain : hFE = 120 to 300 (IC = 0.1 A) Low collector-emitter saturation voltage : VCE(sat) = 0.14 V (max) High-speed switching : tf = 0.2 μs (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEX 150 V Collector-emitter voltage
TPCP8507 Distributor
📁 Related Datasheet
📌 All Tags
