TPCP8507 Datasheet - Toshiba Semiconductor

TPCP8507 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications DC-DC Converters TPCP8507 Unit: mm High DC current gain : hFE = 120 to 300 (IC = 0.1 A) Low collector-emitter saturation voltage : VCE(sat) = 0.14 V (max) High-speed switching : tf = 0.2 μs (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEX 150 V Collector-emitter voltage .

TPCP8507_ToshibaSemiconductor.pdf