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TPCP8501 - MOSFET

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Part number TPCP8501
Manufacturer Toshiba Semiconductor
File Size 219.98 KB
Description MOSFET
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TPCP8501 TOSHIBA Transistor Silicon NPN Epitaxial Type www.DataSheet4U.com TPCP8501 Switching Applications DC-DC Converter Applications • • • High DC current gain : hFE = 100 to 300 (IC = 0.3 A) 2.4±0.1 Unit: mm 0.33±0.05 0.05 M A 8 5 High-speed switching : tf = 100 ns (typ.) 0.475 1 4 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (t = 10s) Junction temperature Storage temperature range t = 10s DC DC (Note 1) Symbol VCBO VCEX VCEO VEBO IC ICP IB Pc (Note 2) Tj Tstg Rating 180 150 100 7 2.0 4.0 0.2 3.3 1.3 150 −55 to 150 Unit V V V A A W °C °C S B A 0.65 2.9±0.1 0.05 M B 0.8±0.05 0.025 S 0.17±0.02 0.28 +0.1 -0.11 1.12 -0.12 1.12 -0.12 0.28 +0.1 -0.11 +0.
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