TPCP8501 Datasheet - Toshiba Semiconductor

TPCP8501 MOSFET

TPCP8501 TOSHIBA Transistor Silicon NPN Epitaxial Type www.DataSheet4U.com TPCP8501 Switching Applications DC-DC Converter Applications High DC current gain : hFE = 100 to 300 (IC = 0.3 A) 2.4±0.1 Unit: mm 0.33±0.05 0.05 M A 8 5 High-speed switching : tf = 100 ns (typ.) 0.475 1 4 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (t = 10s) Ju.

TPCP8501_ToshibaSemiconductor.pdf