* (1) High DC current gain: hFE = 250 to 400 (IC = 0.3 A) (2) Low collector-emitter saturation: VCE(sat) = 0.18 V(max)(IB = 33 mA) (3) High-speed switching: tf = 38 ns(typ.) 3. Packaging and Internal Circuit TPCP8511 PS-8 1. Collector 5. Emitter 2. Collector 6. Collector 3. Collector 7. Collector 4
TPCP8511 Datasheet (183.09 KB)
TPCP8511
183.09 KB
Silicon npn transistor.
Bipolar Transistors Silicon NPN Epitaxial Type
TPCP8511
1. Applications
* High-Speed Switching
* DC-DC Converters
* Photo Flas.
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