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TPCP8511 - Silicon NPN Transistor

Toshiba

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Datasheet Details

Part number	TPCP8511
Manufacturer	Toshiba ↗
File Size	183.09 KB
Description	Silicon NPN Transistor
Datasheet	TPCP8511-Toshiba.pdf

TPCP8511 Product details

Features

(1) High DC current gain: hFE = 250 to 400 (IC = 0.3 A) (2) Low collector-emitter saturation: VCE(sat) = 0.18 V(max)(IB = 33 mA) (3) High-speed switching: tf = 38 ns(typ. ) 3. Packaging and Internal Circuit TPCP8511 PS-8 1. Collector 5. Emitter 2. Collector 6. Collector 3. Collector 7. Collector 4. Base 8. Collector 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage VCBO 100 V V.

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Published: Jan 30, 2024 |